All MOSFET. HUFA75321P3 Datasheet

 

HUFA75321P3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HUFA75321P3
   Marking Code: 75321P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 93 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 36 nC
   trⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
   Package: TO-220AB

 HUFA75321P3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HUFA75321P3 Datasheet (PDF)

 ..1. Size:232K  fairchild semi
 hufa75321p3 hufa75321s3s hufa75321s3st.pdf

HUFA75321P3 HUFA75321P3

HUFA75321P3, HUFA75321S3SData Sheet December 200135A, 55V, 0.034 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 35A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Thermal Impedance SPICE and SABER Models achieves t

 5.1. Size:226K  fairchild semi
 hufa75321d3 hufa75321d3s.pdf

HUFA75321P3 HUFA75321P3

HUFA75321D3, HUFA75321D3SData Sheet December 200120A, 55V, 0.036 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 20A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensating PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Thermal Impedance SPICE and SABER Models achieves

 5.2. Size:224K  fairchild semi
 hufa75321d3 hufa75321d3st.pdf

HUFA75321P3 HUFA75321P3

HUFA75321D3, HUFA75321D3SData Sheet December 200120A, 55V, 0.036 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 20A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensating PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Thermal Impedance SPICE and SABER Models achieves

 6.1. Size:292K  fairchild semi
 hufa75329p3 hufa75329s3s.pdf

HUFA75321P3 HUFA75321P3

HUFA75329G3, HUFA75329P3, HUFA75329S3SData Sheet June 200249A, 55V, 0.024 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 49A, 55VThese N-Channel power MOSFETs Ultra Low On-Resistance, rDS(ON) = 0.024are manufactured using the Temperature Compensating PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Available on th

 6.2. Size:309K  fairchild semi
 hufa75329d3st hufa75329d3 hufa75329d3s.pdf

HUFA75321P3 HUFA75321P3

HUFA75329D3, HUFA75329D3SData Sheet June 1999 File Number 4426.420A, 55V, 0.026 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 20A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Mode

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FQA28N50F | IRF6216 | HUF76445P3

 

 
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