HUFA75329P3 Specs and Replacement
Type Designator: HUFA75329P3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 128 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 49 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 58 nS
Cossⓘ - Output Capacitance: 405 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: TO-220AB
HUFA75329P3 substitution
- MOSFET ⓘ Cross-Reference Search
HUFA75329P3 datasheet
hufa75329p3 hufa75329s3s.pdf
HUFA75329G3, HUFA75329P3, HUFA75329S3S Data Sheet June 2002 49A, 55V, 0.024 Ohm, N-Channel UltraFET Features Power MOSFETs 49A, 55V These N-Channel power MOSFETs Ultra Low On-Resistance, rDS(ON) = 0.024 are manufactured using the Temperature Compensating PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Available on th... See More ⇒
hufa75329d3st hufa75329d3 hufa75329d3s.pdf
HUFA75329D3, HUFA75329D3S Data Sheet June 1999 File Number 4426.4 20A, 55V, 0.026 Ohm, N-Channel UltraFET Features Power MOSFETs 20A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Mode... See More ⇒
hufa75321p3 hufa75321s3s hufa75321s3st.pdf
HUFA75321P3, HUFA75321S3S Data Sheet December 2001 35A, 55V, 0.034 Ohm, N-Channel UltraFET Features Power MOSFETs 35A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models achieves t... See More ⇒
hufa75321d3 hufa75321d3s.pdf
HUFA75321D3, HUFA75321D3S Data Sheet December 2001 20A, 55V, 0.036 Ohm, N-Channel UltraFET Features Power MOSFETs 20A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensating PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models achieves ... See More ⇒
Detailed specifications: HUFA75321D3, HUFA75321D3ST, HUFA75321P3, HUFA75321S3S, HUFA75321S3ST, HUFA75329D3, HUFA75329D3S, HUFA75329D3ST, IRF1405, HUFA75329S3S, HUFA75332G3, HUFA75332S3S, HUFA75333P3, HUFA75333S3S, HUFA75333S3ST, HUFA75337G3, HUFA75337P3
Keywords - HUFA75329P3 MOSFET specs
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