All MOSFET. HUFA75337P3 Datasheet

 

HUFA75337P3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HUFA75337P3
   Marking Code: 75337P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 175 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 91 nC
   trⓘ - Rise Time: 56 nS
   Cossⓘ - Output Capacitance: 625 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: TO-220AB

 HUFA75337P3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HUFA75337P3 Datasheet (PDF)

 ..1. Size:223K  fairchild semi
 hufa75337g3 hufa75337p3 hufa75337s3s hufa75337s3st.pdf

HUFA75337P3 HUFA75337P3

HUFA75337G3, HUFA75337P3, HUFA75337S3SData Sheet December 200175A, 55V, 0.014 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 75A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models

 6.1. Size:233K  fairchild semi
 hufa75333p3 hufa75333s3s hufa75333s3st.pdf

HUFA75337P3 HUFA75337P3

HUFA75333G3, HUFA75333P3, HUFA75333S3SData Sheet December 200166A, 55V, 0.016 Ohm. N-Channel UltraFET FeaturesPower MOSFETs 66A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models

 6.2. Size:268K  fairchild semi
 hufa75332g3 hufa75332s3s.pdf

HUFA75337P3 HUFA75337P3

HUFA75332G3, HUFA75332P3, HUFA75332S3SData Sheet June 200260A, 55V, 0.019 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 60A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models a

 6.3. Size:226K  fairchild semi
 hufa75339g3 hufa75339s3s hufa75339s3st.pdf

HUFA75337P3 HUFA75337P3

HUFA75339G3, HUFA75339P3, HUFA75339S3SData Sheet December 200175A, 55V, 0.012 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 75A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models

 6.4. Size:258K  inchange semiconductor
 hufa75339g3.pdf

HUFA75337P3 HUFA75337P3

Isc N-Channel MOSFET Transistor HUFA75339G3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: CHM1592XGP | HUF76437P3 | FTK840

 

 
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