All MOSFET. HUFA75617D3ST Datasheet

 

HUFA75617D3ST Datasheet and Replacement


   Type Designator: HUFA75617D3ST
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 64 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO-252AA
 

 HUFA75617D3ST substitution

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HUFA75617D3ST Datasheet (PDF)

 ..1. Size:196K  fairchild semi
 hufa75617d3s hufa75617d3st.pdf pdf_icon

HUFA75617D3ST

HUFA75617D3, HUFA75617D3SData Sheet December 200116A, 100V, 0.090 Ohm, N-Channel, UltraFET Power MOSFETsPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceSOURCEDRAINDRAIN- rDS(ON) = 0.090, VGS = 10VGATE (FLANGE) Simulation Models- Temperature Compensated PSPICE and SABER GATEElectrical ModelsDRAIN SOURCE- Spice and SABER

 7.1. Size:200K  fairchild semi
 hufa75637p3 hufa75637s3s hufa75637s3st.pdf pdf_icon

HUFA75617D3ST

HUFA75637P3, HUFA75637S3SData Sheet December 200144A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFETPackagingJEDEC TO-220AB JEDEC TO-263ABFeaturesSOURCEDRAINDRAIN Ultra Low On-Resistance (FLANGE)GATE- rDS(ON) = 0.030, VGS = 10VGATE Simulation ModelsSOURCE - Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN (FLANGE) - Spice a

 7.2. Size:352K  fairchild semi
 hufa75645s3s.pdf pdf_icon

HUFA75617D3ST

HUFA75645S3SData Sheet December 2001N-Channel UltraFET Power MOSFET100 V, 75 A, 14 mPackaging Features Ultra Low On-ResistanceJEDEC TO-263AB- rDS(ON) = 0.014, VGS = 10VDRAIN Simulation Models (FLANGE)- Temperature Compensated PSPICE and SABERElectrical ModelsGATE- Spice and Saber Thermal Impedance ModelsSOURCE- www.fairchild.com Peak Current

 7.3. Size:198K  fairchild semi
 hufa75623s3st.pdf pdf_icon

HUFA75617D3ST

HUFA75623P3, HUFA75623S3STData Sheet December 200122A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFETsPackagingJEDEC TO-220AB JEDEC TO-263ABFeaturesSOURCEDRAINDRAIN Ultra Low On-Resistance (FLANGE)GATE- rDS(ON) = 0.064, VGS = 10VGATE Simulation Models- Temperature Compensated PSPICE and SABER SOURCEElectrical ModelsDRAIN- Spice and SABER

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Keywords - HUFA75617D3ST MOSFET datasheet

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