All MOSFET. HUFA76437S3ST Datasheet

 

HUFA76437S3ST Datasheet and Replacement


   Type Designator: HUFA76437S3ST
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 155 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id|ⓘ - Maximum Drain Current: 71 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 133 nS
   Cossⓘ - Output Capacitance: 695 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: TO-263AB
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HUFA76437S3ST Datasheet (PDF)

 ..1. Size:214K  fairchild semi
 hufa76437p3 hufa76437s3s hufa76437s3st.pdf pdf_icon

HUFA76437S3ST

HUFA76437P3, HUFA76437S3SData Sheet December 200164A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceSOURCEDRAIN- rDS(ON) = 0.014, VGS = 10VDRAIN (FLANGE)GATE- rDS(ON) = 0.017, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCE

 6.1. Size:290K  fairchild semi
 hufa76439p3 hufa76439s3s hufa76439s3st.pdf pdf_icon

HUFA76437S3ST

HUFA76439P3, HUFA76439S3SData Sheet July 200271A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance- rDS(ON) = 0.012, VGS = 10VSOURCEDRAIN- rDS(ON) = 0.014, VGS = 5VDRAIN (FLANGE)GATE Simulation Models- Temperature Compensated PSPICE and SABER GATEElectrical Mo

 6.2. Size:215K  fairchild semi
 hufa76432p3.pdf pdf_icon

HUFA76437S3ST

HUFA76432P3, HUFA76432S3SData Sheet December 200155A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingJEDEC TO-220AB JEDEC TO-263ABFeatures Ultra Low On-ResistanceSOURCE DRAINDRAIN (FLANGE) - rDS(ON) = 0.017, VGS = 10VGATE- rDS(ON) = 0.019, VGS = 5VGATE Simulation Models- Temperature Compensated PSPICE and SABER SOURCEEle

 6.3. Size:215K  fairchild semi
 hufa76432s3s hufa76432s3st.pdf pdf_icon

HUFA76437S3ST

HUFA76432P3, HUFA76432S3SData Sheet December 200155A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingJEDEC TO-220AB JEDEC TO-263ABFeatures Ultra Low On-ResistanceSOURCE DRAINDRAIN (FLANGE) - rDS(ON) = 0.017, VGS = 10VGATE- rDS(ON) = 0.019, VGS = 5VGATE Simulation Models- Temperature Compensated PSPICE and SABER SOURCEEle

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History: FTK60P05S | DMTH8003SPS-13 | 3SK76 | MEM2402 | IXFH110N10P | RSE002P03TL | HM7002SR

Keywords - HUFA76437S3ST MOSFET datasheet

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