WFF12N70S MOSFET. Datasheet pdf. Equivalent
Type Designator: WFF12N70S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 34 nC
trⓘ - Rise Time: 141 nS
Cossⓘ - Output Capacitance: 780 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: TO-220F
WFF12N70S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WFF12N70S Datasheet (PDF)
wff12n70s.pdf
WFF12N70SWFF12N70SWFF12N70SWFF12N70S700V Super-Junction Power MOSFET700V Super-Junction Power MOSFET700V Super-Junction Power MOSFET700V Super-Junction Power MOSFETFeatures Ultra low Rdson Ultra low gate charge (typ. Qg = 34nC) 100% UIS tested RoHS compliant Maximum Junction Temperature Range(150)General DescriptionPower MOSFET is fabricated using
wff12n60.pdf
WFF12N60WFF12N60WFF12N60WFF12N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeaturesFeaturesFeaturesFeatures 12A, 600V,R (Max 0.65)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 39nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage ( V = 4000V AC )ISO Maximum Junction T
wff12n65.pdf
WFF12N65WFF12N65WFF12N65WFF12N65Silicon N-Channel MOSFETFeatures 12A,650V,RDS(on)(Max0.78)@VGS=10V Ultra-low Gate Charge(Typical 51.7nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced using Winsemi s advancedplanar stripe, VDMOS technology. This latest technol
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