All MOSFET. 2N6757 Datasheet

 

2N6757 Datasheet and Replacement


   Type Designator: 2N6757
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO3
 

 2N6757 substitution

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2N6757 Datasheet (PDF)

 ..1. Size:141K  fairchild semi
 2n6757 2n6758.pdf pdf_icon

2N6757

 9.1. Size:147K  international rectifier
 2n6756 irf130.pdf pdf_icon

2N6757

PD - 90333FIRF130REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6756HEXFETTRANSISTORS JANTXV2N6756THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF130 100V 0.18 14AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique process

 9.2. Size:147K  international rectifier
 2n6758 irf230.pdf pdf_icon

2N6757

PD - 90334F IRF230REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6758HEXFETTRANSISTORS JANTXV2N6758THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF230 200V 0.40 9.0ATO-3The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique

 9.3. Size:136K  fairchild semi
 2n6755 2n6756.pdf pdf_icon

2N6757

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Datasheet: 2N6661SM , 2N6755 , 2N6756 , 2N6756JAN , 2N6756JANTX , 2N6756JANTXV , 2N6756JTX , 2N6756JTXV , IRF9540N , 2N6758 , 2N6758JAN , 2N6758JANTX , 2N6758JANTXV , 2N6758JTX , 2N6758JTXV , 2N6759 , 2N6760 .

Keywords - 2N6757 MOSFET datasheet

 2N6757 cross reference
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