IXTZ20N60MB Datasheet and Replacement
Type Designator: IXTZ20N60MB
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: ZPAK
IXTZ20N60MB substitution
IXTZ20N60MB Datasheet (PDF)
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Datasheet: IXTP30N10MB , IXTP8N45MA , IXTP8N45MB , IXTP8N50MA , IXTP8N50MB , IXTU01N100 , IXTU01N80 , IXTZ20N60MA , IRF3205 , IXTZ24N50MA , IXTZ24N50MB , IXTZ27N40MA , IXTZ27N40MB , IXTZ35N25MA , IXTZ35N25MB , IXTZ42N20MA , IXTZ42N20MB .
History: TK25N60X
Keywords - IXTZ20N60MB MOSFET datasheet
IXTZ20N60MB cross reference
IXTZ20N60MB equivalent finder
IXTZ20N60MB lookup
IXTZ20N60MB substitution
IXTZ20N60MB replacement
History: TK25N60X
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