All MOSFET. PJA3434 Datasheet

 

PJA3434 Datasheet and Replacement


   Type Designator: PJA3434
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id|ⓘ - Maximum Drain Current: 0.75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 19 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: SOT-23
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PJA3434 Datasheet (PDF)

 ..1. Size:200K  panjit
 pja3434.pdf pdf_icon

PJA3434

PPJA3434 20V N-Channel Enhancement Mode MOSFET SOT-23 Unit: inch(mm)20 V 750mAVoltage Current Features Low Voltage Drive (1.2V). Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected Lead free in compliance with EU RoHS 2011/65/EU directive.. Green molding compound as per IEC61249 Std. (Halo

 8.1. Size:272K  panjit
 pja3430.pdf pdf_icon

PJA3434

PPJA3430 20V N-Channel Enhancement Mode MOSFET ESD Protected SOT-23 Unit: inch(mm)20 V 2A Voltage Current Features RDS(ON) , VGS@4.5V, ID@2.0A

 8.2. Size:227K  panjit
 pja3431.pdf pdf_icon

PJA3434

PPJA3431 20V P-Channel Enhancement Mode MOSFET ESD Protected SOT-23 Unit: inch(mm)Voltage -20 V Current -1.5A Features RDS(ON) , VGS@-4.5V, ID@-1.5A

 8.3. Size:278K  panjit
 pja3432.pdf pdf_icon

PJA3434

PPJA3432 30V N-Channel Enhancement Mode MOSFET ESD Protected SOT-23 Unit: inch(mm) 30 V 1.6A Voltage Current Features RDS(ON) , VGS@4,5V, ID@1.6A

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History: VBNC1303 | IRFS4010PBF

Keywords - PJA3434 MOSFET datasheet

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