PJA3434 MOSFET. Datasheet pdf. Equivalent
Type Designator: PJA3434
Marking Code: A34
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 0.75 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 1.4 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 19 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: SOT-23
PJA3434 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PJA3434 Datasheet (PDF)
pja3434.pdf
PPJA3434 20V N-Channel Enhancement Mode MOSFET SOT-23 Unit: inch(mm)20 V 750mAVoltage Current Features Low Voltage Drive (1.2V). Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected Lead free in compliance with EU RoHS 2011/65/EU directive.. Green molding compound as per IEC61249 Std. (Halo
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PPJA3430 20V N-Channel Enhancement Mode MOSFET ESD Protected SOT-23 Unit: inch(mm)20 V 2A Voltage Current Features RDS(ON) , VGS@4.5V, ID@2.0A
pja3431.pdf
PPJA3431 20V P-Channel Enhancement Mode MOSFET ESD Protected SOT-23 Unit: inch(mm)Voltage -20 V Current -1.5A Features RDS(ON) , VGS@-4.5V, ID@-1.5A
pja3432.pdf
PPJA3432 30V N-Channel Enhancement Mode MOSFET ESD Protected SOT-23 Unit: inch(mm) 30 V 1.6A Voltage Current Features RDS(ON) , VGS@4,5V, ID@1.6A
pja3439.pdf
PPJA3439 60V P-Channel Enhancement Mode MOSFET SOT-23 Unit : inch(mm) Voltage -60 V Current -300mA Features RDS(ON) , VGS@-10V, ID@-500mA
pja3433.pdf
PPJA3433 30V P-Channel Enhancement Mode MOSFET ESD Protected SOT-23 Unit: inch(mm)Voltage -30 V Current -1.1A Features RDS(ON) , VGS@-4.5V, ID@-1.1A
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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