PJE8400 Specs and Replacement

Type Designator: PJE8400

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 47 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.088 Ohm

Package: SOT-523

PJE8400 substitution

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PJE8400 datasheet

 ..1. Size:242K  panjit
pje8400.pdf pdf_icon

PJE8400

PPJE8400 20V N-Channel Enhancement Mode MOSFET SOT-523 Unit inch(mm) 20 V 1.1A Voltage Current Features RDS(ON) , VGS@4.5V, ID@1.1A... See More ⇒

 8.1. Size:206K  panjit
pje8404.pdf pdf_icon

PJE8400

PPJE8404 30V N-Channel Enhancement Mode MOSFET ESD Protected SOT-523 Unit inch(mm) 30 V 0.6A Voltage Current Features RDS(ON) , VGS@4,5V, ID@0.6A... See More ⇒

 8.2. Size:242K  panjit
pje8402.pdf pdf_icon

PJE8400

PPJE8402 20V N-Channel Enhancement Mode MOSFET ESD Protected SOT-523 Unit inch(mm) 20 V 0.7A Voltage Current Features RDS(ON) , VGS@4,5V, ID@0.7A... See More ⇒

 8.3. Size:262K  panjit
pje8406.pdf pdf_icon

PJE8400

PPJE8406 20V N-Channel Enhancement Mode MOSFET ESD Protected SOT-523 Unit inch(mm) 20 V 800mA Voltage Current Features RDS(ON), VGS@4.5V,IDS@500mA=0.4 RDS(ON), VGS@2.5V,IDS@300mA=0.7 RDS(ON), VGS@1.8V,IDS@100mA=1.2 (typ) Advanced Trench Process Technology Specially Designed for Load Switch or PWM application. ESD Protected Lead f... See More ⇒

Detailed specifications: PJC138K, PJC7400, PJC7401, PJC7403, PJC7404, PJC7406, PJC7407, PJE138K, IRFP260, PJE8401, PJE8402, PJE8403, PJE8404, PJE8405, PJE8406, PJL9801, PJQ2888

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