IXTZ27N40MA Datasheet and Replacement
Type Designator: IXTZ27N40MA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 27 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: ZPAK
IXTZ27N40MA substitution
IXTZ27N40MA Datasheet (PDF)
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