IXTZ35N25MA Datasheet and Replacement
Type Designator: IXTZ35N25MA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: ZPAK
IXTZ35N25MA substitution
IXTZ35N25MA Datasheet (PDF)
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Datasheet: IXTU01N100 , IXTU01N80 , IXTZ20N60MA , IXTZ20N60MB , IXTZ24N50MA , IXTZ24N50MB , IXTZ27N40MA , IXTZ27N40MB , IRF540N , IXTZ35N25MB , IXTZ42N20MA , IXTZ42N20MB , IXTZ67N10MA , IXTZ67N10MB , J108 , J109 , J110 .
Keywords - IXTZ35N25MA MOSFET datasheet
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