IXTZ35N25MA Specs and Replacement

Type Designator: IXTZ35N25MA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: ZPAK

IXTZ35N25MA substitution

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IXTZ35N25MA datasheet

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Detailed specifications: IXTU01N100, IXTU01N80, IXTZ20N60MA, IXTZ20N60MB, IXTZ24N50MA, IXTZ24N50MB, IXTZ27N40MA, IXTZ27N40MB, IRF540, IXTZ35N25MB, IXTZ42N20MA, IXTZ42N20MB, IXTZ67N10MA, IXTZ67N10MB, J108, J109, J110

Keywords - IXTZ35N25MA MOSFET specs

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