WFF5N60 Specs and Replacement

Type Designator: WFF5N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO-220F

WFF5N60 substitution

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WFF5N60 datasheet

 ..1. Size:519K  winsemi
 wff5n60.pdf pdf_icon

WFF5N60

WFF5N60 WFF5N60 WFF5N60 WFF5N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features Features Features Features 4.5A,600V,RDS(on)(Max 2.2 )@VGS=10V Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description General ... See More ⇒

 0.1. Size:521K  winsemi
 wff5n60c.pdf pdf_icon

WFF5N60

WFF5N60C WFF5N60C WFF5N60C WFF5N60C Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 4.5A,600V,R (Max2.5 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 15nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced... See More ⇒

 0.2. Size:522K  winsemi
 wff5n60b.pdf pdf_icon

WFF5N60

WFF5N60B WFF5N60B WFF5N60B WFF5N60B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 4.5A,600V,R (Max2.4 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 15nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced... See More ⇒

 8.1. Size:215K  winsemi
 wff5n65l.pdf pdf_icon

WFF5N60

WFF5N65L Product Description Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features D 5A,650V,R (Max2.7 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 12nC) Fast Switching Capability G 100%Avalanche Tested Maximum Junction Temperature Range(150 ) S General Description This Power MOSFET is produced us... See More ⇒

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Detailed specifications: PMCM4401VNE, PMCM4401VPE, PMCM440VNE, PMCM6501VPE, PMCM650VNE, WFF2N65, WFF2N65B, WFF4N60, IRF3205, WFF5N60B, WFF5N60C, WFF5N65B, WFF5N80, WFF630, WFF634, WFF640, WFF730

Keywords - WFF5N60 MOSFET specs

 WFF5N60 cross reference

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