All MOSFET. WFP8N60 Datasheet

 

WFP8N60 Datasheet and Replacement


   Type Designator: WFP8N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 145 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO-220
 

 WFP8N60 substitution

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WFP8N60 Datasheet (PDF)

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WFP8N60

WFP8N60WFP8N60WFP8N60WFP8N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 7.5A,600V,R (Max1.2)@V =10VDS(on) GS Ultra-low Gate charge(Typical 28nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced usi

 0.1. Size:703K  winsemi
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WFP8N60

WFP8N60BWFP8N60BWFP8N60BWFP8N60BSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 7.5A,600V,R (Max1.2)@V =10VDS(on) GS Ultra-low Gate charge(Typical 28nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced

Datasheet: WFP70N06T , WFP730 , WFP740 , WFP7N60 , WFP830 , WFP830B , WFP840 , WFP840B , P60NF06 , WFP8N60B , WFP9N20 , WFU1N60 , WFU1N60N , WFU20N06 , WFU2N60 , WFU2N60B , WFU4N60 .

History: IXTP32N65X | RXH100N03 | IXTP2N95A | SSF2302 | UK3018G-AL3-R | AFP2311A | SRT15N075HD56

Keywords - WFP8N60 MOSFET datasheet

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