WFU2N60B Specs and Replacement

Type Designator: WFU2N60B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 46 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 15 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm

Package: TO-251

WFU2N60B substitution

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WFU2N60B datasheet

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WFU2N60B

WFU2N60B WFU2N60B WFU2N60B WFU2N60B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 2A,600V,R (Max 5.0 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 9nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced u... See More ⇒

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WFU2N60B

WFU2N60 WFU2N60 WFU2N60 WFU2N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 2A,600V,R (Max 5.0 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 15.3nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced us... See More ⇒

 8.1. Size:296K  winsemi
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WFU2N60B

WFU2N65L Product Description Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features D 2.0A,650V,R (Max5.0 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 8.6nC) Fast Switching Capability G 100%Avalanche Tested Maximum Junction Temperature Range(150 ) S General Description This Power MOSFET is produced... See More ⇒

Detailed specifications: WFP840B, WFP8N60, WFP8N60B, WFP9N20, WFU1N60, WFU1N60N, WFU20N06, WFU2N60, 5N60, WFU4N60, WFU5N50, WFU5N60, WFU5N60B, WFU730, WFU830, WFW064N, WFW13N50

Keywords - WFU2N60B MOSFET specs

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