PMDXB550UNE
MOSFET. Datasheet pdf. Equivalent
Type Designator: PMDXB550UNE
Marking Code: 011000'
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.285
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.95
V
|Id|ⓘ - Maximum Drain Current: 0.59
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 0.6
nC
trⓘ - Rise Time: 7
nS
Cossⓘ -
Output Capacitance: 5.8
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.67
Ohm
Package: DFN1010B-6
PMDXB550UNE
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMDXB550UNE
Datasheet (PDF)
..1. Size:237K nxp
pmdxb550une.pdf
PMDXB550UNE30 V, dual N-channel Trench MOSFET25 March 2015 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Leadless ultra small and ultra thin SMD plas
9.1. Size:249K nxp
pmdxb600une.pdf
PMDXB600UNE20 V, dual N-channel Trench MOSFET1 July 2015 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD pla
9.2. Size:233K nxp
pmdxb1200upe.pdf
PMDXB1200UPE30 V, dual P-channel Trench MOSFET25 March 2015 Product data sheet1. General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Leadless ultra small and ultra thin SMD pla
9.3. Size:734K nxp
pmdxb600unel.pdf
PMDXB600UNEL20 V, dual N-channel Trench MOSFET28 June 2016 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low leakage current Leadless ultra small and ultra thin SMD plasti
9.4. Size:246K nxp
pmdxb950upe.pdf
PMDXB950UPE20 V, dual P-channel Trench MOSFET30 June 2015 Product data sheet1. General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD pl
9.5. Size:732K nxp
pmdxb950upel.pdf
PMDXB950UPEL20 V, dual P-channel Trench MOSFET28 June 2016 Product data sheet1. General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low leakage current Trench MOSFET technology Leadless ultra s
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