All MOSFET. PMDXB550UNE Datasheet

 

PMDXB550UNE Datasheet and Replacement


   Type Designator: PMDXB550UNE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.285 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.59 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 5.8 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.67 Ohm
   Package: DFN1010B-6
 

 PMDXB550UNE substitution

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PMDXB550UNE Datasheet (PDF)

 ..1. Size:237K  nxp
 pmdxb550une.pdf pdf_icon

PMDXB550UNE

PMDXB550UNE30 V, dual N-channel Trench MOSFET25 March 2015 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Leadless ultra small and ultra thin SMD plas

 9.1. Size:249K  nxp
 pmdxb600une.pdf pdf_icon

PMDXB550UNE

PMDXB600UNE20 V, dual N-channel Trench MOSFET1 July 2015 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD pla

 9.2. Size:233K  nxp
 pmdxb1200upe.pdf pdf_icon

PMDXB550UNE

PMDXB1200UPE30 V, dual P-channel Trench MOSFET25 March 2015 Product data sheet1. General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Leadless ultra small and ultra thin SMD pla

 9.3. Size:734K  nxp
 pmdxb600unel.pdf pdf_icon

PMDXB550UNE

PMDXB600UNEL20 V, dual N-channel Trench MOSFET28 June 2016 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low leakage current Leadless ultra small and ultra thin SMD plasti

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Datasheet: PMDPB70XPE , PMDPB80XP , PMDPB85UPE , PMDPB95XNE , PMDT290UCE , PMDT290UNE , PMDT670UPE , PMDXB1200UPE , 50N06 , PMDXB600UNE , PMDXB950UPE , PMF63UN , PMF77XN , PMF87EN , PMFPB8032XP , PMFPB8040XP , PMG45UN .

History: AM20P02-99D | CHM8968JGP | CHM8811JGP

Keywords - PMDXB550UNE MOSFET datasheet

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