PMPB11EN MOSFET. Datasheet pdf. Equivalent
Type Designator: PMPB11EN
Marking Code: 1C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 13.7 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 155 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm
Package: DFN2020MD-6
PMPB11EN Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMPB11EN Datasheet (PDF)
pmpb11en.pdf
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pmpb13xnea.pdf
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pmpb12unea.pdf
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pmpb12une.pdf
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pmpb15xn.pdf
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pmpb100ene.pdf
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pmpb10xne.pdf
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pmpb15xpa.pdf
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pmpb16ep.pdf
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pmpb13xne.pdf
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pmpb12un.pdf
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pmpb16xn.pdf
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pmpb10up.pdf
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pmpb13up.pdf
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pmpb14xp.pdf
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pmpb19xp.pdf
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pmpb10xnea.pdf
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pmpb10en.pdf
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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: MMIX1F44N100Q3 | IRFP244PBF | NCE60P50K | IRF713
History: MMIX1F44N100Q3 | IRFP244PBF | NCE60P50K | IRF713
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