PMPB16XN MOSFET. Datasheet pdf. Equivalent
Type Designator: PMPB16XN
Marking Code: 1L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 7.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7.2 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 155 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: DFN2020MD-6
PMPB16XN Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMPB16XN Datasheet (PDF)
pmpb16xn.pdf
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pmpb16ep.pdf
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pmpb100xpea.pdf
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pmpb13xnea.pdf
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pmpb12unea.pdf
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pmpb12une.pdf
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pmpb15xn.pdf
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pmpb100ene.pdf
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pmpb10xne.pdf
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pmpb15xpa.pdf
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pmpb13xne.pdf
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pmpb12un.pdf
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pmpb10up.pdf
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pmpb15xp.pdf
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pmpb13up.pdf
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pmpb14xp.pdf
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pmpb19xp.pdf
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pmpb11en.pdf
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pmpb10xnea.pdf
PMPB10XNEA20 V, N-channel Trench MOSFET27 March 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo
pmpb10en.pdf
PMPB10EN30 V, N-channel MOSFET10 July 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Logic-level compatible Very fast switching Trench Superjunction Technology
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
