PMPB33XP Datasheet and Replacement
Type Designator: PMPB33XP
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 145 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
Package: DFN2020MD-6
PMPB33XP substitution
PMPB33XP Datasheet (PDF)
pmpb33xp.pdf

PMPB33XP20 V, single P-channel Trench MOSFET5 September 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits Trench MOSFET technology Small and leadless u
pmpb33xn.pdf

PMPB33XN30 V single N-channel Trench MOSFET6 July 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits Trench MOSFET technology Very fast switching S
pmpb30xpe.pdf

PMPB30XPE20 V, P-channel Trench MOSFET26 April 2018 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin SMD pl
Datasheet: PMPB20UN , PMPB20XPE , PMPB215ENEA , PMPB23XNE , PMPB27EP , PMPB29XNE , PMPB29XPE , PMPB33XN , AON7506 , PMPB40SNA , PMPB43XPE , PMPB47XP , PMPB48EP , PMPB85ENEA , PMPB95ENEA , PMR290UNE , PMR670UPE .
History: CEB6086 | AP60WN2K3H | CSD25302Q2
Keywords - PMPB33XP MOSFET datasheet
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History: CEB6086 | AP60WN2K3H | CSD25302Q2



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