PMV37EN2 Datasheet and Replacement
Type Designator: PMV37EN2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.51 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 50 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
Package: TO-236AB
PMV37EN2 substitution
PMV37EN2 Datasheet (PDF)
pmv37en2.pdf

PMV37EN230 V, N-channel Trench MOSFET3 June 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology Enhanced power dissipa
pmv37enea.pdf

PMV37ENEA60 V, N-channel Trench MOSFET21 May 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology El
pmv37en.pdf

Product specificationPMV37EN30 V, 3.1 A N-channel Trench MOSFETRev. 1 9 May 2011 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible Trench MOSFET te
Datasheet: PMT760EN , PMV130ENEA , PMV16XN , PMV20EN , PMV20XNE , PMV250EPEA , PMV27UPE , PMV30UN2 , IRFZ46N , PMV40UN2 , PMV45EN2 , PMV48XPA , PMV50XP , PMV65XPE , PMV65XPEA , PMV75UP , PMXB120EPE .
History: IXFT36N60P | LSI1012LT1G | JMSH1565AUS
Keywords - PMV37EN2 MOSFET datasheet
PMV37EN2 cross reference
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PMV37EN2 substitution
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History: IXFT36N60P | LSI1012LT1G | JMSH1565AUS



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