PMV75UP Specs and Replacement

Type Designator: PMV75UP

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.49 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 63 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.102 Ohm

Package: TO-236AB

PMV75UP substitution

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PMV75UP datasheet

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PMV75UP

PMV75UP 20 V, P-channel Trench MOSFET 25 April 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissipa... See More ⇒

Detailed specifications: PMV30UN2, PMV37EN2, PMV40UN2, PMV45EN2, PMV48XPA, PMV50XP, PMV65XPE, PMV65XPEA, IRFZ24N, PMXB120EPE, PMXB350UPE, PMXB360ENEA, PMXB40UNE, PMXB43UNE, PMXB56EN, PMXB65ENE, PMXB65UPE

Keywords - PMV75UP MOSFET specs

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