All MOSFET. PMZB290UNE2 Datasheet

 

PMZB290UNE2 Datasheet and Replacement


   Type Designator: PMZB290UNE2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: DFN1006B-3
 

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PMZB290UNE2 Datasheet (PDF)

 ..1. Size:712K  nxp
 pmzb290une2.pdf pdf_icon

PMZB290UNE2

PMZB290UNE220 V, N-channel Trench MOSFET24 March 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching

 4.1. Size:953K  nxp
 pmzb290une.pdf pdf_icon

PMZB290UNE2

PMZB290UNE20 V, single N-channel Trench MOSFETRev. 3 23 March 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection u

 5.1. Size:832K  nxp
 pmzb290un.pdf pdf_icon

PMZB290UNE2

PMZB290UN20 V, single N-channel Trench MOSFETRev. 1 11 May 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Fast switching Low threshold voltage

 9.1. Size:230K  nxp
 pmzb200une.pdf pdf_icon

PMZB290UNE2

PMZB200UNE30 V, N-channel Trench MOSFET12 March 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology

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Datasheet: PMZ550UNE , PMZ600UNE , PMZ950UPE , PMZB1200UPE , PMZB150UNE , PMZB200UNE , PMZB290UN , PMZB290UNE , IRF3205 , PMZB300XN , PMZB320UPE , PMZB350UPE , PMZB370UNE , PMZB380XN , PMZB390UNE , PMZB420UN , PMZB550UNE .

History: FQD2N50TF

Keywords - PMZB290UNE2 MOSFET datasheet

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