All MOSFET. PNM523T703E0-2 Datasheet

 

PNM523T703E0-2 Datasheet and Replacement


   Type Designator: PNM523T703E0-2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.18 A
   Cossⓘ - Output Capacitance: 20 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
   Package: SOT-523
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PNM523T703E0-2 Datasheet (PDF)

 ..1. Size:142K  prisemi
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PNM523T703E0-2

PNM523T703E0-2 N-Channel MOSFET Description PNM523T703E0-2 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary VDS(V) RDS(on)() VGS(th)(V) ID(A) G1 40 2.0@ VGS=10V 0.5 to 1.3 0.18 S2 Electrical characteristics per line@25( unless otherwise specifi

 7.1. Size:202K  prisemi
pnm523t201e0.pdf pdf_icon

PNM523T703E0-2

PNM523T201E0 N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, D3 low on-resistance and cost-effectiveness. MOSFET Product Summary V (V) R ( ) I (A) DS DS(on) D0.2@ V =4.5V GSG1 20 0.25@ VGS=2.5V 1 0.31@ V =1.8V GSS2Absolute maximum rating@25 Parameter Symbol Value Units Drain-Source Voltage V 20

 7.2. Size:1557K  prisemi
pnm523t30v01.pdf pdf_icon

PNM523T703E0-2

PNM523T30V01N-Channel MOSFETDescriptionPNM523T30V01 is designed for high speed switching applicationsThe enhancement mode MOS is extremely high density cell and low on-resistance.D3MOSFET Product SummaryV (V) R () V (V) I (A)DS DS(on) GS(th) D30 7@ V =2.5V,I =10mA 0.5 to 1.5 0.1GS DG1S2Electrical characteristics per line@25( unless otherwise spec

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: VBNC1303 | IRFS4010PBF

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