PNM723T703E0-2
MOSFET. Datasheet pdf. Equivalent
Type Designator: PNM723T703E0-2
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.15
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 0.18
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 20
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 7.5
Ohm
Package:
SOT-723
PNM723T703E0-2
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PNM723T703E0-2
Datasheet (PDF)
..1. Size:586K prisemi
pnm723t703e0-2.pdf
PNM723T703E0-2 N-Channel MOSFET Description PNM723T703E0-2 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary R () V (V) DS(on) V (V) I (A) DS GS(th) DG1 40 7.5@ V =10V 0.5 to 1.5 0.18 GSS2Electrical characteristics per line@25( unless othe
7.1. Size:182K prisemi
pnm723t201e0.pdf
PNM723T201E0 N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, D3 low on-resistance and cost-effectiveness. MOSFET Product Summary V (V) R () I (A) DS DS(on) D0.2@ V =4.5V GSG1 20 0.25@ VGS=2.5V 1 0.31@ V =1.8V GSS2Absolute maximum rating@25 Parameter Symbol Value Units Drain-Source Voltage V 20
7.2. Size:1550K prisemi
pnm723t30v01.pdf
PNM723T30V01N-Channel MOSFETDescriptionPNM723T30V01 is designed for high speed switching applicationsThe enhancement mode MOS is extremely high density cell and low on-resistance.D3MOSFET Product SummaryV (V) R () V (V) I (A)DS DS(on) GS(th) D30 7@ V =2.5V,I =10mA 0.5 to 1.5 0.1GS DG1S2Electrical characteristics per line@25( unless otherwise spec
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.