PNM723T703E0-2 Datasheet and Replacement
Type Designator: PNM723T703E0-2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 20 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm
Package: SOT-723
PNM723T703E0-2 substitution
PNM723T703E0-2 Datasheet (PDF)
pnm723t703e0-2.pdf

PNM723T703E0-2 N-Channel MOSFET Description PNM723T703E0-2 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary R () V (V) DS(on) V (V) I (A) DS GS(th) DG1 40 7.5@ V =10V 0.5 to 1.5 0.18 GSS2Electrical characteristics per line@25( unless othe
pnm723t201e0.pdf

PNM723T201E0 N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, D3 low on-resistance and cost-effectiveness. MOSFET Product Summary V (V) R () I (A) DS DS(on) D0.2@ V =4.5V GSG1 20 0.25@ VGS=2.5V 1 0.31@ V =1.8V GSS2Absolute maximum rating@25 Parameter Symbol Value Units Drain-Source Voltage V 20
pnm723t30v01.pdf

PNM723T30V01N-Channel MOSFETDescriptionPNM723T30V01 is designed for high speed switching applicationsThe enhancement mode MOS is extremely high density cell and low on-resistance.D3MOSFET Product SummaryV (V) R () V (V) I (A)DS DS(on) GS(th) D30 7@ V =2.5V,I =10mA 0.5 to 1.5 0.1GS DG1S2Electrical characteristics per line@25( unless otherwise spec
Datasheet: PMZB670UPE , PMZB790SN , PMZB950UPE , PNM23T100V6 , PNM23T703E0-2 , PNM523T201E0 , PNM523T703E0-2 , PNM723T201E0 , IRFB4227 , PNM8N30V60 , PNM8P30V12 , PNM8P30V20 , PNMDP100V10 , PNMDP30V60 , PNMDP30V90 , PNMDP600V1 , PNMDP600V2 .
History: SM7A25NSUB | AP2306AGN
Keywords - PNM723T703E0-2 MOSFET datasheet
PNM723T703E0-2 cross reference
PNM723T703E0-2 equivalent finder
PNM723T703E0-2 lookup
PNM723T703E0-2 substitution
PNM723T703E0-2 replacement
History: SM7A25NSUB | AP2306AGN



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