All MOSFET. PNMDP600V1 Datasheet

 

PNMDP600V1 Datasheet and Replacement


   Type Designator: PNMDP600V1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 1.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 6.7 nS
   Cossⓘ - Output Capacitance: 14.5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 9 Ohm
   Package: TO-252
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PNMDP600V1 Datasheet (PDF)

 ..1. Size:113K  prisemi
 pnmdp600v1 pnmip600v1.pdf pdf_icon

PNMDP600V1

PNMDP600V1 PNMIP600V1 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D2 MOSFET Product Summary VDS(V) RDS(on)() ID(A) 600 7.5@ VGS=10V 1.3G1 S3 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF CHARACTERISTICS Dr

 5.1. Size:113K  prisemi
 pnmdp600v4 pnmip600v4.pdf pdf_icon

PNMDP600V1

PNMDP600V4 PNMIP600V4 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D2 MOSFET Product Summary VDS(V) RDS(on)() ID(A) 600 1.9@ VGS=10V 4G1 S3 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF CHARACTERISTICS Drai

 5.2. Size:113K  prisemi
 pnmdp600v2 pnmip600v2.pdf pdf_icon

PNMDP600V1

PNMDP600V2 PNMIP600V2 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D2 MOSFET Product Summary VDS(V) RDS(on)() ID(A) 600 3.6@ VGS=10V 2G1 S3 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF CHARACTERISTICS Drai

 9.1. Size:123K  prisemi
 pnmdp30v60.pdf pdf_icon

PNMDP600V1

PNMDP30V60 N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary D (2) VDS(V) RDS(on)(m) ID(A) 30 8.3@VGS=10V 60G (1) S (3) Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage VDS 30 VGate-Source Voltage VGS 20 V TA=25 60 Drai

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Keywords - PNMDP600V1 MOSFET datasheet

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