PNMIP600V2 MOSFET. Datasheet pdf. Equivalent
Type Designator: PNMIP600V2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 56.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 2 A
trⓘ - Rise Time: 14.3 nS
Cossⓘ - Output Capacitance: 29 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm
Package: TO-251
PNMIP600V2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PNMIP600V2 Datasheet (PDF)
pnmdp600v2 pnmip600v2.pdf
PNMDP600V2 PNMIP600V2 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D2 MOSFET Product Summary VDS(V) RDS(on)() ID(A) 600 3.6@ VGS=10V 2G1 S3 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF CHARACTERISTICS Drai
pnmdp600v4 pnmip600v4.pdf
PNMDP600V4 PNMIP600V4 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D2 MOSFET Product Summary VDS(V) RDS(on)() ID(A) 600 1.9@ VGS=10V 4G1 S3 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF CHARACTERISTICS Drai
pnmdp600v1 pnmip600v1.pdf
PNMDP600V1 PNMIP600V1 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D2 MOSFET Product Summary VDS(V) RDS(on)() ID(A) 600 7.5@ VGS=10V 1.3G1 S3 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF CHARACTERISTICS Dr
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
