PNMIP600V4 Specs and Replacement
Type Designator: PNMIP600V4
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Electrical Characteristics
tr ⓘ - Rise Time: 28.7 nS
Cossⓘ - Output Capacitance: 51 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
Package: TO-251
PNMIP600V4 substitution
- MOSFET ⓘ Cross-Reference Search
PNMIP600V4 datasheet
pnmdp600v4 pnmip600v4.pdf
PNMDP600V4 PNMIP600V4 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 2 MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) 600 1.9@ VGS=10V 4 G 1 S 3 Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACTERISTICS Drai... See More ⇒
pnmdp600v2 pnmip600v2.pdf
PNMDP600V2 PNMIP600V2 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 2 MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) 600 3.6@ VGS=10V 2 G 1 S 3 Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACTERISTICS Drai... See More ⇒
pnmdp600v1 pnmip600v1.pdf
PNMDP600V1 PNMIP600V1 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 2 MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) 600 7.5@ VGS=10V 1.3 G 1 S 3 Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACTERISTICS Dr... See More ⇒
Detailed specifications: PNMDP30V60 , PNMDP30V90 , PNMDP600V1 , PNMDP600V2 , PNMDP600V4 , PNMET20V06E , PNMIP600V1 , PNMIP600V2 , 2N7002 , PNMT20V3 , PNMT30V6 , PNMT45V2 , PNMT50V02E , PNMT60V02 , PNMT60V02E , PNMT60V3 , PNMTO600V2 .
Keywords - PNMIP600V4 MOSFET specs
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