PNMT60V02 PDF and Equivalents Search

 

PNMT60V02 PDF Specs and Replacement


   Type Designator: PNMT60V02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.18 A

Electrical Characteristics


   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm
   Package: SOT-23
 

 PNMT60V02 substitution

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PNMT60V02 PDF Specs

 ..1. Size:109K  prisemi
pnmt60v02.pdf pdf_icon

PNMT60V02

PNMT60V02 N-Channel MOSFET Description PNMT60V02 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance. D 3 MOSFET Product Summary VDS(V) RDS(on)( ) VGS(th)(V) ID(A) G 1 60 7.5@ VGS=10V 0.5 to 1.5 0.18 S 2 Electrical characteristics per line@25 ( unless otherwise specified) Par... See More ⇒

 0.1. Size:168K  prisemi
pnmt60v02e.pdf pdf_icon

PNMT60V02

PNMT60V02E N-Channel MOSFET Description PNMT60V02E is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance. D 3 MOSFET Product Summary V (V) R ( ) V (V) I (A) DS DS(on) GS(th) D G 1 60 7.5@ V =10V 0.5 to 1.5 0.18 GS S 2 Electrical characteristics per line@25 ( unless otherwise specified) Para... See More ⇒

 7.1. Size:121K  prisemi
pnmt60v3.pdf pdf_icon

PNMT60V02

PNMT60V3 N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, D 3 low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) G 1 60 0.096@ VGS=4.5V 3 S 2 Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF/ON CHARACTE... See More ⇒

 9.1. Size:241K  prisemi
pnmt6n2.pdf pdf_icon

PNMT60V02

PNMT6N2 Transistor with N-MOSFET Feature Top View This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. 6 5 C 4 PNMT6N2 is composed by a transistor and a MOSFET C S Transistor 8(B/D) 7(C) Very low collector to emitter saturation voltage DC current gain >100 1 2 3 E E G 3A continuous collector current PNP epitaxial... See More ⇒

Detailed specifications: PNMET20V06E , PNMIP600V1 , PNMIP600V2 , PNMIP600V4 , PNMT20V3 , PNMT30V6 , PNMT45V2 , PNMT50V02E , K3569 , PNMT60V02E , PNMT60V3 , PNMTO600V2 , PNMTO600V4 , PNMTO600V5 , PNMTO600V7 , PNMTO600V8 , PNMTOF600V2 .

Keywords - PNMT60V02 MOSFET specs

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