PNMTO600V5 Specs and Replacement

Type Designator: PNMTO600V5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 132 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 44 nS

Cossⓘ - Output Capacitance: 58.4 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm

Package: TO-220

PNMTO600V5 substitution

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PNMTO600V5 datasheet

 ..1. Size:123K  prisemi
 pnmto600v5 pnmtof600v5.pdf pdf_icon

PNMTO600V5

PNMTO600V5 PNMTOF600V5 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 2 MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) 600 1.44@ VGS=10V 5.0 G 1 S 3 Absolute maximum rating@25 Rating Symbol Value Units Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS 30 V TC=25 ID 3.2 A Co... See More ⇒

 5.1. Size:119K  prisemi
 pnmto600v4 pnmtof600v4.pdf pdf_icon

PNMTO600V5

PNMTO600V4 PNMTOF600V4 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 2 MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) 600 1.9@ VGS=10V 4 G 1 S 3 Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACTERISTICS Dra... See More ⇒

 5.2. Size:124K  prisemi
 pnmto600v7 pnmtof600v7.pdf pdf_icon

PNMTO600V5

PNMTO600V7 PNMTOF600V7 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 2 MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) 600 1.1@ VGS=10V 7.0 G 1 S 3 Absolute maximum rating@25 Rating Symbol Value Units Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS 20 V Continuous Drain Curre... See More ⇒

 5.3. Size:119K  prisemi
 pnmto600v2 pnmtof600v2.pdf pdf_icon

PNMTO600V5

PNMTO600V2 PNMTOF600V2 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 2 MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) 600 3.6@ VGS=10V 2 G 1 S 3 Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACTERISTICS Dra... See More ⇒

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Detailed specifications: PNMT30V6, PNMT45V2, PNMT50V02E, PNMT60V02, PNMT60V02E, PNMT60V3, PNMTO600V2, PNMTO600V4, K4145, PNMTO600V7, PNMTO600V8, PNMTOF600V2, PNMTOF600V4, PNMTOF600V5, PNMTOF600V7, PNMTOF600V8, PNMTOF650V13

Keywords - PNMTO600V5 MOSFET specs

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