All MOSFET. PNMTO600V7 Datasheet

 

PNMTO600V7 Datasheet and Replacement


   Type Designator: PNMTO600V7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm
   Package: TO-220
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PNMTO600V7 Datasheet (PDF)

 ..1. Size:124K  prisemi
 pnmto600v7 pnmtof600v7.pdf pdf_icon

PNMTO600V7

PNMTO600V7 PNMTOF600V7 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D2 MOSFET Product Summary VDS(V) RDS(on)() ID(A) 600 1.1@ VGS=10V 7.0G1 S3Absolute maximum rating@25 Rating Symbol Value Units Drain-Source Voltage VDS 600 VGate-Source Voltage VGS 20 V Continuous Drain Curre

 5.1. Size:119K  prisemi
 pnmto600v4 pnmtof600v4.pdf pdf_icon

PNMTO600V7

PNMTO600V4 PNMTOF600V4 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D2 MOSFET Product Summary VDS(V) RDS(on)() ID(A) 600 1.9@ VGS=10V 4G1 S3 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF CHARACTERISTICS Dra

 5.2. Size:119K  prisemi
 pnmto600v2 pnmtof600v2.pdf pdf_icon

PNMTO600V7

PNMTO600V2 PNMTOF600V2 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D2 MOSFET Product Summary VDS(V) RDS(on)() ID(A) 600 3.6@ VGS=10V 2G1 S3 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF CHARACTERISTICS Dra

 5.3. Size:124K  prisemi
 pnmto600v8 pnmtof600v8.pdf pdf_icon

PNMTO600V7

PNMTO600V8 PNMTOF600V8 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D2 MOSFET Product Summary VDS(V) RDS(on)() ID(A) 600 0.98@ VGS=10V 8.0G1 S3Absolute maximum rating@25 PNMTO6 PNMTOFRating Symbol Units 00V8 600V8 Drain-Source Voltage VDS 600 VGate-Source Voltage VGS 30 V

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Keywords - PNMTO600V7 MOSFET datasheet

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