PPMT32V4 Datasheet and Replacement
Type Designator: PPMT32V4
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOT-23
PPMT32V4 substitution
PPMT32V4 Datasheet (PDF)
ppmt32v4.pdf

PPMT32V4 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary VDS(V) RDS(on)(m) ID(A) G1-30 67 @ VGS=-4.5V -4.3S2 Absolute maximum rating@25 Rating Symbol Value Units Drain-Source Voltage VDS -30 VGate-Source Voltage VGS 20 V Continuous Drain Current ID -4.3 A
ppmt30v3.pdf

PPMT30V3 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary V (V) R () I (A) DS DS(on) DG10.058 @ V =-10V GS-30 -3 0.075@ V =-4.5V GSS2 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsO
ppmt30v4.pdf

PPMT30V4 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary V (V) R ( ) I (A) DS DS(on) DG10.053 @ V =-10V GS-30 -4.2 0.065@ V =-4.5V GSS2 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units
Datasheet: PPMET20V08 , PPMET20V08E , PPMS8N20V3 , PPMT12V4 , PPMT20V3 , PPMT20V4E , PPMT30V3 , PPMT30V4 , 2N60 , PPMT50V02 , PPMUT20V3 , PS03N20SA , PS03P20SA , PS04N20SA , PS04P30SA , PS04P30SB , PS05N20DA .
History: HYG023N03LR1U | 18N20
Keywords - PPMT32V4 MOSFET datasheet
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History: HYG023N03LR1U | 18N20



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