All MOSFET. PS06P30DA Datasheet

 

PS06P30DA MOSFET. Datasheet pdf. Equivalent


   Type Designator: PS06P30DA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: SOP-8

 PS06P30DA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PS06P30DA Datasheet (PDF)

 ..1. Size:415K  prospower
 ps06p30da.pdf

PS06P30DA PS06P30DA

PS06P30DA 30V Dual Channel PMOSEFT Revision : 1.0Update Date : Apr. 2011 ProsPower Microelectronics Co., LtdPS06P30DA 30V Dual Channel PMOSFET 2. Applications 1. General Description PWM applicationsThe PS06P30DA uses advanced trench technology Load switchand design to provide excellent Rds(on) with low Power managementgate charge and operation with gate voltage

 7.1. Size:401K  prospower
 ps06p30sa.pdf

PS06P30DA PS06P30DA

PS06P30SA 30V Single Channel PMOSEFT Revision : 1.0Update Date : Apr. 2011 ProsPower Microelectronics Co., LtdPS06P30SA 30V Single Channel PMOSFET 2. Applications 1. General Description PWM applicationsThe PS06P30SA uses advanced trench technology Load switchand design to provide excellent Rds(on) with low Power managementgate charge and operation with gate vol

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History: PSMN011-60MS | BL80N20L-W | BUZ345 | KF2N60D | MP4N60ER | STP45NE06

 

 
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