All MOSFET. WVM15N60 Datasheet

 

WVM15N60 Datasheet and Replacement


   Type Designator: WVM15N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO3
 

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WVM15N60 Datasheet (PDF)

 ..1. Size:22K  shaanxi
 wvm15n60.pdf pdf_icon

WVM15N60

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM15N60Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power source co

 8.1. Size:23K  shaanxi
 wvm15n40.pdf pdf_icon

WVM15N60

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM15N40(IRF350)Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power s

 8.2. Size:23K  shaanxi
 wvm15n50.pdf pdf_icon

WVM15N60

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM15N50(MTM15N50) Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of powe

 8.3. Size:23K  shaanxi
 wvm15n20.pdf pdf_icon

WVM15N60

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM15N20(MTM15N20) Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of powe

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Datasheet: WTX1013 , WVM11N80 , WVM12N10 , WVM13N50 , WVM15N20 , WVM15N40 , WVM15N45 , WVM15N50 , K3569 , WVM18N20 , WVM20N50 , WVM20N8 , WVM21N50 , WVM25N40 , WVM28N10 , WVM3.9N100 , WVM30N10 .

History: NTGS3441BT1G | TPA60R330M

Keywords - WVM15N60 MOSFET datasheet

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