WVM4N20 Specs and Replacement
Type Designator: WVM4N20
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
ton ⓘ - Turn-on Time: 60 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO3
WVM4N20 substitution
- MOSFET ⓘ Cross-Reference Search
WVM4N20 datasheet
wvm4n20.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM4N20(IRF220) Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards QZJ840611 3. Use for high speed switch, circuit of power so... See More ⇒
wvm4n50.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM4N50(MTM4N50) Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards QZJ840611 3. Use for high speed switch, circuit of power ... See More ⇒
Detailed specifications: WVM28N10, WVM3.9N100, WVM30N10, WVM30N20, WVM30N30, WVM3N10, WVM3N30, WVM40N20, K4145, WVM4N50, WVM55N10, WVM6N100, WVM7N12, WVM8N20, WVM8N60, WVM9.5N100, WW459
Keywords - WVM4N20 MOSFET specs
WVM4N20 cross reference
WVM4N20 equivalent finder
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WVM4N20 substitution
WVM4N20 replacement
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