PSMN022-30BL
MOSFET. Datasheet pdf. Equivalent
Type Designator: PSMN022-30BL
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 41
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.15
V
|Id|ⓘ - Maximum Drain Current: 30
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 9
nC
trⓘ - Rise Time: 29
nS
Cossⓘ -
Output Capacitance: 96
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0296
Ohm
Package:
D2PAK
PSMN022-30BL
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PSMN022-30BL
Datasheet (PDF)
..1. Size:223K nxp
psmn022-30bl.pdf
PSMN022-30BLN-channel 30 V 22.6 m logic level MOSFET in D2PAKRev. 1 21 March 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency du
4.1. Size:211K philips
psmn022-30pl.pdf
PSMN022-30PLN-channel 30 V 22 m logic level MOSFETRev. 02 1 November 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to low sw
4.2. Size:807K nxp
psmn022-30pl.pdf
PSMN022-30PLN-channel 30 V 22 m logic level MOSFETRev. 02 1 November 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to low sw
4.3. Size:881K cn vbsemi
psmn022-30pl.pdf
PSMN022-30PLwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.010 at VGS = 10 V 5530 25 nC0.018 at VGS = 4.5 V 45DTO-220AB GSG D SN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise n
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