All MOSFET. PSMN023-40YLC Datasheet

 

PSMN023-40YLC MOSFET. Datasheet pdf. Equivalent

Type Designator: PSMN023-40YLC

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 25 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.95 V

Maximum Drain Current |Id|: 24 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 8.4 nC

Rise Time (tr): 3.8 nS

Drain-Source Capacitance (Cd): 110 pF

Maximum Drain-Source On-State Resistance (Rds): 0.026 Ohm

Package: LFPAK33

PSMN023-40YLC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PSMN023-40YLC Datasheet (PDF)

1.1. psmn023-40ylc.pdf Size:216K _update_mosfet

PSMN023-40YLC
PSMN023-40YLC

PSMN023-40YLC N-channel 40 V 23mΩ logic level MOSFET in LFPAK using NextPower technology 22 August 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits • High rel

2.1. psmn023-80ls.pdf Size:374K _philips2

PSMN023-40YLC
PSMN023-40YLC

PSMN023-80LS N-channel QFN3333 80 V 23 m? standard level MOSFET Rev. 2 18 August 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits High efficiency due

 4.1. psmn022-30bl.pdf Size:223K _update_mosfet

PSMN023-40YLC
PSMN023-40YLC

PSMN022-30BL N-channel 30 V 22.6 mΩ logic level MOSFET in D2PAK Rev. 1 — 21 March 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency du

4.2. psmn020-150w.pdf Size:92K _update_mosfet

PSMN023-40YLC
PSMN023-40YLC

Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN020-150W FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d • Very low on-state resistance VDSS = 150 V • Fast switching • Low thermal resistance ID = 73 A g RDS(ON) ≤ 20 mΩ s GENERAL DESCRIPTION PINNING SOT429 (TO247) SiliconMAX products use the latest PIN DESCRIPTION Phil

 4.3. psmn027-100xs.pdf Size:216K _update_mosfet

PSMN023-40YLC
PSMN023-40YLC

PSMN027-100XS N-channel 100V 26.8 mΩ standard level MOSFET in TO220F (SOT186A) Rev. 2 — 6 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benef

4.4. psmn027-100bs.pdf Size:205K _update_mosfet

PSMN023-40YLC
PSMN023-40YLC

PSMN027-100BS N-channel 100V 26.8 mΩ standard level MOSFET in D2PAK. Rev. 2 — 1 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficienc

 4.5. psmn020-30mlc.pdf Size:274K _update_mosfet

PSMN023-40YLC
PSMN023-40YLC

PSMN020-30MLC N-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using TrenchMOS Technology 4 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits •

4.6. psmn026-80ys.pdf Size:225K _philips2

PSMN023-40YLC
PSMN023-40YLC

PSMN026-80YS N-channel LFPAK 80 V 27.5 m? standard level MOSFET Rev. 01 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provide

4.7. psmn028-100ys.pdf Size:247K _philips2

PSMN023-40YLC
PSMN023-40YLC

PSMN028-100YS N-channel LFPAK 100V 27.5 m? standard level MOSFET Rev. 02 30 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provi

4.8. psmn020-150w.pdf Size:94K _philips2

PSMN023-40YLC
PSMN023-40YLC

Philips Semiconductors Product specification N-channel TrenchMOS? transistor PSMN020-150W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 150 V Fast switching Low thermal resistance ID = 73 A g RDS(ON) ? 20 m? s GENERAL DESCRIPTION PINNING SOT429 (TO247) SiliconMAX products use the latest PIN DESCRIPTION Philips Trench technology

4.9. psmn025-100d 2.pdf Size:97K _philips2

PSMN023-40YLC
PSMN023-40YLC

Philips Semiconductors Product specification N-channel TrenchMOS? transistor PSMN025-100D FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 47 A g RDS(ON) ? 25 m? s GENERAL DESCRIPTION PINNING SOT428 (DPAK) SiliconMAX products use the latest PIN DESCRIPTION tab Philips Trench techno

4.10. psmn027-100ps.pdf Size:238K _philips2

PSMN023-40YLC
PSMN023-40YLC

PSMN027-100PS N-channel 100V 26.8 m? standard level MOSFET in TO220 Rev. 02 19 February 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency du

4.11. psmn022-30pl.pdf Size:211K _philips2

PSMN023-40YLC
PSMN023-40YLC

PSMN022-30PL N-channel 30 V 22 m? logic level MOSFET Rev. 02 1 November 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching

4.12. psmn020-100ys.pdf Size:234K _philips2

PSMN023-40YLC
PSMN023-40YLC

PSMN020-100YS N-channel 100V 20.5m? standard level MOSFET in LFPAK Rev. 02 7 January 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS pr

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