PSMN041-80YL PDF and Equivalents Search

 

PSMN041-80YL Specs and Replacement

Type Designator: PSMN041-80YL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 64 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11.2 nS

Cossⓘ - Output Capacitance: 99 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm

Package: LFPAK56

PSMN041-80YL substitution

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PSMN041-80YL datasheet

 ..1. Size:352K  nxp
psmn041-80yl.pdf pdf_icon

PSMN041-80YL

PSMN041-80YL N-channel 80 V 41 m logic level MOSFET in LFPAK56 1 May 2013 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in LFPAK56 package. This product has been designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due... See More ⇒

 8.1. Size:233K  philips
psmn045-80ys.pdf pdf_icon

PSMN041-80YL

PSMN045-80YS N-channel LFPAK 80 V 45 m standard level MOSFET Rev. 02 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMO... See More ⇒

 8.2. Size:87K  philips
psmn040-200w.pdf pdf_icon

PSMN041-80YL

Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN040-200W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 50 A g RDS(ON) 40 m s GENERAL DESCRIPTION PINNING SOT429 (TO247) SiliconMAX products use the latest PIN DESCRIPTION Phil... See More ⇒

 8.3. Size:347K  nxp
psmn040-100mse.pdf pdf_icon

PSMN041-80YL

PSMN040-100MSE N-channel 100 V 36.6 m standard level MOSFET in LFPAK33 designed specifically for high power PoE applications 26 March 2013 Product data sheet 1. General description New standards and proprietary approaches are enabling Power-over-Ethernet (PoE) systems capable of delivering up to 90W to each powered device (PD). Such solutions place increased demands on the power sourci... See More ⇒

Detailed specifications: PSMN022-30BL, PSMN023-40YLC, PSMN027-100BS, PSMN027-100XS, PSMN034-100BS, PSMN038-100YL, PSMN040-100MSE, PSMN040-200W, SI2302, PSMN050-80BS, PSMN075-100MSE, PSMN0R7-25YLD, PSMN0R9-30YLD, PSMN1R0-30YLD, PSMN1R0-40YLD, PSMN1R1-40BS, PSMN1R2-30YLD

Keywords - PSMN041-80YL MOSFET specs

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