PSMN1R8-30BL
MOSFET. Datasheet pdf. Equivalent
Type Designator: PSMN1R8-30BL
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 270
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.15
V
|Id|ⓘ - Maximum Drain Current: 100
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 170
nC
trⓘ - Rise Time: 156
nS
Cossⓘ -
Output Capacitance: 2000
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0018
Ohm
Package:
D2PAK
PSMN1R8-30BL
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PSMN1R8-30BL
Datasheet (PDF)
..1. Size:209K nxp
psmn1r8-30bl.pdf 
PSMN1R8-30BLN-channel 30 V, 1.8 m logic level MOSFET in D2PAKRev. 1 22 March 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency du
..2. Size:255K inchange semiconductor
psmn1r8-30bl.pdf
isc N-Channel MOSFET Transistor PSMN1R8-30BLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 1.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
4.1. Size:218K philips
psmn1r8-30pl.pdf
PSMN1R8-30PLN-channel 30 V, 1.8 m logic level MOSFET in TO-220Rev. 02 2 November 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency
4.2. Size:299K nxp
psmn1r8-30mlh.pdf
PSMN1R8-30MLHN-channel 30 V, 2.1 m, 150 A logic level MOSFET inLFPAK33 using NextPowerS3 technology30 September 2019 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package.NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 150 Aand optimizedwith low gate resistance (RG) for fast-s
4.3. Size:814K nxp
psmn1r8-30pl.pdf
PSMN1R8-30PLN-channel 30 V, 1.8 m logic level MOSFET in TO-220Rev. 02 2 November 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency
4.4. Size:261K inchange semiconductor
psmn1r8-30pl.pdf
isc N-Channel MOSFET Transistor PSMN1R8-30PLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 1.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
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