PSMN2R0-30YLD PDF and Equivalents Search

 

PSMN2R0-30YLD Specs and Replacement

Type Designator: PSMN2R0-30YLD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 142 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 31 nS

Cossⓘ - Output Capacitance: 1477 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm

Package: LFPAK56

PSMN2R0-30YLD substitution

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PSMN2R0-30YLD datasheet

 ..1. Size:230K  nxp
 psmn2r0-30yld.pdf pdf_icon

PSMN2R0-30YLD

PSMN2R0-30YLD N-channel 30 V, 2.0 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology 11 December 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFET... See More ⇒

 2.1. Size:238K  philips
 psmn2r0-30yl.pdf pdf_icon

PSMN2R0-30YLD

PSMN2R0-30YL N-channel 30 V 2 m logic level MOSFET in LFPAK Rev. 4 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits... See More ⇒

 2.2. Size:221K  nxp
 psmn2r0-30yle.pdf pdf_icon

PSMN2R0-30YLD

PSMN2R0-30YLE N-channel 30 V 2 m logic level MOSFET in LFPAK 12 October 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Enhanced forward biased safe op... See More ⇒

 2.3. Size:823K  nxp
 psmn2r0-30yl.pdf pdf_icon

PSMN2R0-30YLD

PSMN2R0-30YL N-channel 30 V 2 m logic level MOSFET in LFPAK Rev. 4 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits... See More ⇒

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Detailed specifications: PSMN1R4-40YLD, PSMN1R5-30BLE, PSMN1R6-30BL, PSMN1R6-40YLC, PSMN1R8-30BL, PSMN1R8-40YLC, PSMN1R9-40PL, PSMN2R0-30BL, IRFZ46N, PSMN2R0-30YLE, PSMN2R1-40PL, PSMN2R2-40BS, PSMN2R4-30MLD, PSMN2R4-30YLD, PSMN2R5-60PL, PSMN2R6-60PS, PSMN2R7-30BL

Keywords - PSMN2R0-30YLD MOSFET specs

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