PSMN2R0-30YLD MOSFET. Datasheet pdf. Equivalent
Type Designator: PSMN2R0-30YLD
Marking Code: 2D030L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 142 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 100 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 46 nC
trⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 1477 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
Package: LFPAK56
PSMN2R0-30YLD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PSMN2R0-30YLD Datasheet (PDF)
psmn2r0-30yld.pdf
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psmn2r0-30yl.pdf
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psmn2r0-30yle.pdf
PSMN2R0-30YLEN-channel 30 V 2 m logic level MOSFET in LFPAK12 October 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in LFPAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.1.2 Features and benefits Enhanced forward biased safe op
psmn2r0-30yl.pdf
PSMN2R0-30YLN-channel 30 V 2 m logic level MOSFET in LFPAKRev. 4 10 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefits
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