All MOSFET. PSMN2R8-25MLC Datasheet

 

PSMN2R8-25MLC MOSFET. Datasheet pdf. Equivalent


   Type Designator: PSMN2R8-25MLC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 88 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.15 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 37.7 nC
   trⓘ - Rise Time: 24.6 nS
   Cossⓘ - Output Capacitance: 533 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
   Package: LFPAK33

 PSMN2R8-25MLC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PSMN2R8-25MLC Datasheet (PDF)

 ..1. Size:365K  nxp
psmn2r8-25mlc.pdf

PSMN2R8-25MLC
PSMN2R8-25MLC

PSMN2R8-25MLCN-channel 25 V 2.8 m logic level MOSFET in LFPAK33 using NextPower TechnologyRev. 3 15 June 2012 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and bene

 6.1. Size:222K  philips
psmn2r8-40ps.pdf

PSMN2R8-25MLC
PSMN2R8-25MLC

PSMN2R8-40PSN-channel TO220 40 V 2.8 m standard level MOSFETRev. 01 1 November 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency

 6.2. Size:745K  nxp
psmn2r8-40ps.pdf

PSMN2R8-25MLC
PSMN2R8-25MLC

PSMN2R8-40PSN-channel TO220 40 V 2.8 m standard level MOSFET11 February 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and conduct

 6.3. Size:226K  nxp
psmn2r8-80bs.pdf

PSMN2R8-25MLC
PSMN2R8-25MLC

PSMN2R8-80BSN-channel 80 V, 3 m standard level FET in D2PAKRev. 2 29 February 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency d

 6.4. Size:301K  nxp
psmn2r8-40ysd.pdf

PSMN2R8-25MLC
PSMN2R8-25MLC

PSMN2R8-40YSDN-channel 40 V, 2.8 m, 160 A standard level MOSFET inLFPAK56 using NextPower-S3 Schottky-Plus technology26 August 2019 Product data sheet1. General description160 A, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56package using advanced TrenchMOS Superjunction technology. This product has been designedand qualified for high performance

 6.5. Size:216K  nxp
psmn2r8-40bs.pdf

PSMN2R8-25MLC
PSMN2R8-25MLC

PSMN2R8-40BSN-channel 40 V 2.9 m standard level MOSFET in D2PAKRev. 1 20 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficie

 6.6. Size:261K  inchange semiconductor
psmn2r8-40ps.pdf

PSMN2R8-25MLC
PSMN2R8-25MLC

isc N-Channel MOSFET Transistor PSMN2R8-40PSFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 2.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 6.7. Size:255K  inchange semiconductor
psmn2r8-80bs.pdf

PSMN2R8-25MLC
PSMN2R8-25MLC

isc N-Channel MOSFET Transistor PSMN2R8-80BSFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 3.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 6.8. Size:254K  inchange semiconductor
psmn2r8-40bs.pdf

PSMN2R8-25MLC
PSMN2R8-25MLC

isc N-Channel MOSFET Transistor PSMN2R8-40BSFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 2.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

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