All MOSFET. 2SJ555 Datasheet

 

2SJ555 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SJ555

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 60 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 4100 pF

Maximum Drain-Source On-State Resistance (Rds): 0.024 Ohm

Package: TO3P

2SJ555 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SJ555 Datasheet (PDF)

1.1. rej03g0902 2sj555ds.pdf Size:103K _renesas

2SJ555
2SJ555

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.2. 2sj555.pdf Size:90K _renesas

2SJ555
2SJ555

2SJ555 Silicon P Channel MOS FET REJ03G0902-0300 (Previous: ADE-208-634A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.017 ? typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate G 2. Drain (Flange) 3. Source

 5.1. 2sj557a.pdf Size:276K _upd

2SJ555
2SJ555

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.2. rej03g0898 2sj551lsds.pdf Size:108K _renesas

2SJ555
2SJ555

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 5.3. 2sj552.pdf Size:96K _renesas

2SJ555
2SJ555

2SJ552(L), 2SJ552(S) Silicon P Channel MOS FET REJ03G0899-0400 (Previous: ADE-208-651B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.042 ? typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package name: LDP

5.4. 2sj553.pdf Size:96K _renesas

2SJ555
2SJ555

2SJ553(L), 2SJ553(S) Silicon P Channel MOS FET REJ03G0900-0400 (Previous: ADE-208-650B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.028 ? typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package name: LDP

 5.5. rej03g0899 2sj552lsds.pdf Size:109K _renesas

2SJ555
2SJ555

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.6. 2sj551.pdf Size:95K _renesas

2SJ555
2SJ555

2SJ551(L), 2SJ551(S) Silicon P Channel MOS FET REJ03G0898-0400 (Previous: ADE-208-647B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.050 ? typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package name: LDP

5.7. 2sj550.pdf Size:95K _renesas

2SJ555
2SJ555

2SJ550(L), 2SJ550(S) Silicon P Channel MOS FET REJ03G0897-0300 (Previous: ADE-208-633A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.075 ? typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package name: LDP

5.8. rej03g0897 2sj550lsds.pdf Size:109K _renesas

2SJ555
2SJ555

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.9. rej03g0900 2sj553lsds.pdf Size:109K _renesas

2SJ555
2SJ555

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.10. 2sj554.pdf Size:90K _renesas

2SJ555
2SJ555

2SJ554 Silicon P Channel MOS FET REJ03G0901-0400 (Previous: ADE-208-628B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.028 ? typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate G 2. Drain (Flange) 3. Source

5.11. rej03g0901 2sj554ds.pdf Size:103K _renesas

2SJ555
2SJ555

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.12. 2sj557.pdf Size:60K _nec

2SJ555
2SJ555

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ557 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit : mm) The 2SJ557 is a switching device which can be driven directly +0.1 0.4 0.05 by a 4 V power source. 0.16+0.1 0.06 The 2SJ557 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as pow

5.13. 2sj559.pdf Size:50K _nec

2SJ555
2SJ555

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ559 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING (Unit : mm) The 2SJ559 is a switching device which can be driven directly 0.3 ± 0.05 0.1+0.1 –0.05 by a 2.5 V power source. The 2SJ559 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital

Datasheet: 2SJ547 , 2SJ548 , 2SJ549 , 2SJ550 , 2SJ551 , 2SJ552 , 2SJ553 , 2SJ554 , BS170 , 2SK1000 , 2SK1006-01MR , 2SK1007-01 , 2SK1013-01 , 2SK1017 , 2SK1019 , 2SK105 , 2SK1059 .

 

 
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