PSMN3R3-60PL MOSFET. Datasheet pdf. Equivalent

   Type Designator: PSMN3R3-60PL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 293 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
   |Id|ⓘ - Maximum Drain Current: 130 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 95 nC
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 822 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
   Package: TO-220AB

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PSMN3R3-60PL Datasheet (PDF)

..1. Size:255K nxp
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PSMN3R3-60PLN-channel 60 V, 3.4 m logic level MOSFET in SOT787 February 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product designand manufacture has been optimized for use in battery operated power tools.2. Features and benefits High efficiency due to low switching & conduction losses Robust constructio

..2. Size:261K inchange semiconductor
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isc N-Channel MOSFET Transistor PSMN3R3-60PLFEATURESDrain Current I = 130A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 3.4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

6.1. Size:222K philips
psmn3r3-40ys.pdf pdf_icon

PSMN3R3-40YSN-channel LFPAK 40 V 3.3 m standard level MOSFETRev. 04 25 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchM

6.2. Size:298K nxp
psmn3r3-40msh.pdf pdf_icon

PSMN3R3-40MSHN-channel 40 V, 3.3 m, standard level MOSFET in LFPAK33using NextPower-S3 technology11 November 2019 Product data sheet1. General description118 A, standard level N-channel enhancement mode MOSFET in 175 C LFPAK33 package usingadvanced TrenchMOS Superjunction technology. This product has been designed and qualified forhigh efficiency applications at high switching

6.3. Size:191K nxp
psmn3r3-80ps.pdf pdf_icon

PSMN3R3-80PSN-channel 80 V, 3.3 m standard level MOSFET in TO-220Rev. 1 27 October 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO-220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effici

6.4. Size:222K nxp
psmn3r3-80bs.pdf pdf_icon

PSMN3R3-80BSN-channel 80 V, 3.5 m standard level MOSFET in D2PAKRev. 2 29 February 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficie

6.5. Size:296K nxp
psmn3r3-40mlh.pdf pdf_icon

PSMN3R3-40MLHN-channel 40 V, 3.3 m, logic level MOSFET in LFPAK33using NextPower-S3 technology11 November 2019 Product data sheet1. General description118 A, logic level N-channel enhancement mode MOSFET in 175 C LFPAK33 package usingadvanced TrenchMOS Superjunction technology. This product has been designed and qualified forhigh efficiency applications at high switching frequ

6.6. Size:184K nxp
psmn3r3-80es.pdf pdf_icon

PSMN3R3-80ESN-channel 80 V, 3.3 m standard level MOSFET in I2PAKRev. 1 31 October 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien

6.7. Size:824K nxp
psmn3r3-40ys.pdf pdf_icon

6.8. Size:261K inchange semiconductor
psmn3r3-80ps.pdf pdf_icon

isc N-Channel MOSFET Transistor PSMN3R3-80PSFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 3.3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

6.9. Size:255K inchange semiconductor
psmn3r3-80bs.pdf pdf_icon

isc N-Channel MOSFET Transistor PSMN3R3-80BSFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 3.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

6.10. Size:255K inchange semiconductor
psmn3r3-80es.pdf pdf_icon

isc N-Channel MOSFET Transistor PSMN3R3-80ESFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 3.3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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PSMN3R3-60PL MOSFET. Datasheet pdf. Equivalent

PSMN3R3-60PL Datasheet (PDF)

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