PSMN6R0-30YLD MOSFET. Datasheet pdf. Equivalent
Type Designator: PSMN6R0-30YLD
Marking Code: 6D030L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 47 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 66 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 13.7 nC
trⓘ - Rise Time: 16.2 nS
Cossⓘ - Output Capacitance: 587 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: LFPAK56
PSMN6R0-30YLD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PSMN6R0-30YLD Datasheet (PDF)
psmn6r0-30yld.pdf
PSMN6R0-30YLDN-channel 30 V, 6.0 m logic level MOSFET in LFPAK56using NextPowerS3 Technology10 February 2014 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSFET
psmn6r0-30yl.pdf
PSMN6R0-30YLN-channel 30 V 6 m logic level MOSFET in LFPAKRev. 04 10 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefit
psmn6r0-30ylb.pdf
PSMN6R0-30YLBN-channel 30 V 6.5 m logic level MOSFET in LFPAK using NextPower technologyRev. 2 24 October 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benef
psmn6r0-25ylb.pdf
PSMN6R0-25YLBN-channel 25 V 6.1 m logic level MOSFET in LFPAK using NextPower technologyRev. 2 31 October 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benef
psmn6r0-25yld.pdf
PSMN6R0-25YLDN-channel 25 V, 6.75 m logic level MOSFET in LFPAK56using NextPowerS3 Technology6 April 2016 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising Nexperias unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSF
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
