PSMN7R0-100BS MOSFET. Datasheet pdf. Equivalent

   Type Designator: PSMN7R0-100BS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 269 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 125 nC
   trⓘ - Rise Time: 45.6 nS
   Cossⓘ - Output Capacitance: 438 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
   Package: D2PAK

PSMN7R0-100BS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS