All MOSFET. PSMN8R5-100XS Datasheet

 

PSMN8R5-100XS Datasheet and Replacement


   Type Designator: PSMN8R5-100XS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 49 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 100 nC
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 380 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO-220F
 

 PSMN8R5-100XS substitution

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PSMN8R5-100XS Datasheet (PDF)

 ..1. Size:228K  nxp
psmn8r5-100xs.pdf pdf_icon

PSMN8R5-100XS

PSMN8R5-100XSN-channel 100V 8.5 m standard level MOSFET in TO220F(SOT186A)29 November 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220F (SOT186A) package qualified to175C. This product is designed and qualified for use in a wide range of industrial,communications and domestic equipment.1.2 Features and benefits Hi

 3.1. Size:250K  nxp
psmn8r5-100esf.pdf pdf_icon

PSMN8R5-100XS

PSMN8R5-100ESFNextPower 100 V, 8.8 m N-channel MOSFET in I2PAKpackage10 April 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency

 3.2. Size:220K  nxp
psmn8r5-100es.pdf pdf_icon

PSMN8R5-100XS

PSMN8R5-100ESN-channel 100 V 8.5 m standard level MOSFET in I2PAK11 October 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a I2PAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.1.2 Features and benefits High efficiency due t

 3.3. Size:258K  nxp
psmn8r5-100psf.pdf pdf_icon

PSMN8R5-100XS

PSMN8R5-100PSFNextPower 100 V, 8.7 m N-channel MOSFET in TO220package10 April 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency

Datasheet: PSMN7R6-60BS , PSMN7R6-60XS , PSMN7R8-100PSE , PSMN7R8-120ES , PSMN7R8-120PS , PSMN8R0-40BS , PSMN8R5-100ES , PSMN8R5-100PS , 4435 , PSMN8R5-108ES , PSMN8R7-80BS , PSMN9R0-25MLC , PSMN9R5-100BS , PSMN9R8-30MLC , PSMNR90-30BL , XP151A11B0MR-G , XP151A12A2MR-G .

History: 2SK3018LT1

Keywords - PSMN8R5-100XS MOSFET datasheet

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