XP152A11E5MR-G PDF and Equivalents Search

 

XP152A11E5MR-G Specs and Replacement

Type Designator: XP152A11E5MR-G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm

Package: SOT-23

XP152A11E5MR-G substitution

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XP152A11E5MR-G datasheet

 ..1. Size:95K  tysemi
xp152a11e5mr-g.pdf pdf_icon

XP152A11E5MR-G

Product specification XP152A11E5MR-G Power MOSFET GENERAL DESCRIPTION The XP152A11E5MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package mak... See More ⇒

 ..2. Size:300K  torex
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XP152A11E5MR-G

XP152A11E5MR-G ETR1120_003 Power MOSFET GENERAL DESCRIPTION The XP152A11E5MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high de... See More ⇒

 7.1. Size:2336K  htsemi
xp152a12comr.pdf pdf_icon

XP152A11E5MR-G

XP152A12COMR 20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A 130m RDS(ON), Vgs@-2.5V, Ids@-2.0A 190m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S SOT-23(PACKAGE) Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.0... See More ⇒

 7.2. Size:644K  shenzhen
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XP152A11E5MR-G

Shenzhen Tuofeng Semiconductor Technology Co., Ltd P-Channel Power MOS FET Applications Notebook PCs DMOS Structure Cellular and portable phones Low On-State Resistance 0.3 (max) On - board power supplies Ultra High-Speed Switching Li - ion battery systems Gate Protect Diode Built-in SOT -... See More ⇒

Detailed specifications: PSMN8R7-80BS, PSMN9R0-25MLC, PSMN9R5-100BS, PSMN9R8-30MLC, PSMNR90-30BL, XP151A11B0MR-G, XP151A12A2MR-G, XP151A13A0MR-G, TK10A60D, XP152A12C0MR-G, XP161, XP161A11A1PR-G, XP161A1265PR-G, XP161A1355PR-G, XP162A11C0PR-G, XP162A12A6PR-G, XP202A0003MR-G

Keywords - XP152A11E5MR-G MOSFET specs

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