2SK1297 PDF and Equivalents Search

 ..1. Size:52K  hitachi
 2sk1297.pdf

2SK1297 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-3P D 1 G 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK1297 Absolute Max... See More ⇒

 ..2. Size:258K  inchange semiconductor
 2sk1297.pdf

isc N-Channel MOSFET Transistor 2SK1297 FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 18m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive ABS... See More ⇒

 8.1. Size:96K  renesas
 rej03g0918 2sk1298ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.2. Size:369K  nec
 2sk1293.pdf

... See More ⇒

 8.3. Size:387K  nec
 2sk1290.pdf

... See More ⇒

 8.4. Size:362K  nec
 2sk1295.pdf

... See More ⇒

 8.5. Size:374K  nec
 2sk1294.pdf

... See More ⇒

 8.6. Size:374K  nec
 2sk1292.pdf

... See More ⇒

 8.7. Size:48K  hitachi
 2sk1298.pdf

2SK1298 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-3PFM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK1298 Absolute Maximum Rat... See More ⇒

 8.8. Size:38K  hitachi
 2sk1296.pdf

2SK1296 Silicon N-Channel MOS FET Application TO 220AB High speed power switching Features Low on-resistance 2 High speed switching 1 2 3 Low drive current 4 V gate drive device 1. Gate Can be driven from 5 V source 1 2. Drain Suitable for motor drive, DC-DC converter, (Flange) power switch and solenoid drive 3. Source 3 Table 1 Absolute Maximum ... See More ⇒

 8.9. Size:48K  hitachi
 2sk1299.pdf

2SK1299(L), 2SK1299(S) Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline DPAK-1 4 4 1 2 3 1 2 3 D 1. Gate G 2. Drain 3. Source 4. D... See More ⇒

 8.10. Size:265K  inchange semiconductor
 2sk1298.pdf

isc N-Channel MOSFET Transistor 2SK1298 FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 18m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. AB... See More ⇒

 8.11. Size:261K  inchange semiconductor
 2sk1296.pdf

isc N-Channel MOSFET Transistor 2SK1296 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 28m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose... See More ⇒

 8.12. Size:265K  inchange semiconductor
 2sk1299s.pdf

isc N-Channel MOSFET Transistor 2SK1299S FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 350m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.... See More ⇒

 8.13. Size:274K  inchange semiconductor
 2sk1299l.pdf

isc N-Channel MOSFET Transistor 2SK1299L FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 350m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.... See More ⇒