HX2301A PDF and Equivalents Search

 

HX2301A Specs and Replacement

Type Designator: HX2301A

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: SOT23

HX2301A substitution

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HX2301A datasheet

 ..1. Size:181K  hx
hx2301a.pdf pdf_icon

HX2301A

SOT-23 Plastic-Encapsulate Transistors HX2301A MOSFET(P-Channel) FEATURES PWM applications Load switch Power management MARKING A1SHB MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage -20 V VGS Gate-Source voltage 12 V ID Drain current -2.5 A PD Power Dissipation 0.9 W Tj Junction Temperature 150 Tstg Storage Temperature... See More ⇒

 8.1. Size:316K  hx
hx2301.pdf pdf_icon

HX2301A

SOT-23 -3Plastic-Encapsulate Transistors HX2301 MOSFET(P-Channel) FEATURES TrenchFET Power MOSFET MARKING A1SHB MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage -20 V VGS Gate-Source voltage 12 V -2.8 A ID Drain current PD Power Dissipation 1 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 E... See More ⇒

 9.1. Size:183K  hx
hx2305.pdf pdf_icon

HX2301A

SOT-23-3Plastic-Encapsulate Transistors HX2305MOSFET(P-Channel) FEATURES TrenchFET Power MOSFET MARKING A5SHB MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage -20 V VGS Gate-Source voltage 12 V -3 A ID Drain current PD Power Dissipation 1 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHAR... See More ⇒

 9.2. Size:181K  hx
hx2302a.pdf pdf_icon

HX2301A

SOT-23 Plastic-Encapsulate Transistors HX2302A MOSFET(N-Channel) FEATURES TrenchFET Power MOSFET MARKING A2SHB MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 20 V VGS Gate-Source voltage 12 V ID Drain current 2.5 A PD Power Dissipation 0.9 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL C... See More ⇒

Detailed specifications: MMN400A006U1, MMN400A010U1, MMN600DB012B, MMN600DB015B, MMN668A010U1, FTP03N06NA, ITP09N50A, HX2301, AO3400A, HX2302, HX2302A, HX2305, HX3400, HX3400A, HX3401, HX3401A, HX3415

Keywords - HX2301A MOSFET specs

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