All MOSFET. PSMN1R4-40YLD Datasheet

 

PSMN1R4-40YLD MOSFET. Datasheet pdf. Equivalent

Type Designator: PSMN1R4-40YLD

Marking Code: 1D440L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 238 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.2 V

Maximum Drain Current |Id|: 100 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 96 nC

Rise Time (tr): 49 nS

Drain-Source Capacitance (Cd): 1543 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0014 Ohm

Package: LFPAK56

PSMN1R4-40YLD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PSMN1R4-40YLD Datasheet (PDF)

1.1. psmn1r4-40yld.pdf Size:280K _update_mosfet

PSMN1R4-40YLD
PSMN1R4-40YLD

PSMN1R4-40YLD N-channel 40 V 1.4 mΩ logic level MOSFET in LFPAK56 using NextPower-S3 technology 26 August 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. F

2.1. psmn1r4-30yld.pdf Size:285K _update_mosfet

PSMN1R4-40YLD
PSMN1R4-40YLD

PSMN1R4-30YLD N-channel 30 V, 1.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 30 May 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs wit

 4.1. psmn1r2-30yld.pdf Size:286K _update_mosfet

PSMN1R4-40YLD
PSMN1R4-40YLD

PSMN1R2-30YLD N-channel 30 V, 1.2 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 30 May 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs wit

4.2. psmn1r8-40ylc.pdf Size:233K _update_mosfet

PSMN1R4-40YLD
PSMN1R4-40YLD

PSMN1R8-40YLC N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology 22 August 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits • High r

 4.3. psmn1r1-40bs.pdf Size:222K _update_mosfet

PSMN1R4-40YLD
PSMN1R4-40YLD

PSMN1R1-40BS N-channel 40 V 1.3 mΩ standard level MOSFET in D2PAK Rev. 2 — 29 February 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK (SOT404) package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  H

4.4. psmn1r9-40pl.pdf Size:255K _update_mosfet

PSMN1R4-40YLD
PSMN1R4-40YLD

PSMN1R9-40PL N-channel 40 V, 1.7 mΩ logic level MOSFET in SOT78 1 February 2013 Product data sheet 1. General description Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits • High efficiency due to low switching & conduction losses • Robust constructio

 4.5. psmn1r0-40yld.pdf Size:288K _update_mosfet

PSMN1R4-40YLD
PSMN1R4-40YLD

PSMN1R0-40YLD N-channel 40 V 1.1 mΩ logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 25 August 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in 150 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching appli

4.6. psmn1r0-30yld.pdf Size:234K _update_mosfet

PSMN1R4-40YLD
PSMN1R4-40YLD

PSMN1R0-30YLD N-channel 30 V, 1.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 19 September 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFE

4.7. psmn1r6-40ylc.pdf Size:230K _update_mosfet

PSMN1R4-40YLD
PSMN1R4-40YLD

PSMN1R6-40YLC N-channel 40 V 1.55 mΩ logic level MOSFET in LFPAK using NextPower technology 22 August 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits • High

4.8. psmn1r8-30bl.pdf Size:209K _update_mosfet

PSMN1R4-40YLD
PSMN1R4-40YLD

PSMN1R8-30BL N-channel 30 V, 1.8 mΩ logic level MOSFET in D2PAK Rev. 1 — 22 March 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency du

4.9. psmn1r5-30ble.pdf Size:221K _update_mosfet

PSMN1R4-40YLD
PSMN1R4-40YLD

PSMN1R5-30BLE N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK 12 October 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits • Enhanced forward biased safe

4.10. psmn1r6-30bl.pdf Size:213K _update_mosfet

PSMN1R4-40YLD
PSMN1R4-40YLD

PSMN1R6-30BL N-channel 30 V 1.9 mΩ logic level MOSFET in D2PAK Rev. 1 — 22 March 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due

4.11. psmn1r3-30yl.pdf Size:213K _philips2

PSMN1R4-40YLD
PSMN1R4-40YLD

PSMN1R3-30YL N-channel 30 V 1.3 m? logic level MOSFET in LFPAK Rev. 02 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides lo

4.12. psmn1r8-30pl.pdf Size:218K _philips2

PSMN1R4-40YLD
PSMN1R4-40YLD

PSMN1R8-30PL N-channel 30 V, 1.8 m? logic level MOSFET in TO-220 Rev. 02 2 November 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to l

4.13. psmn1r5-40ps.pdf Size:235K _philips2

PSMN1R4-40YLD
PSMN1R4-40YLD

PSMN1R5-40PS N-channel 40 V 1.6 m? standard level MOSFET in TO220. Rev. 02 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 (SOT78) package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficienc

4.14. psmn1r7-25ylc.pdf Size:340K _philips2

PSMN1R4-40YLD
PSMN1R4-40YLD

PSMN1R7-25YLC N-channel 25 V 1.9 m? logic level MOSFET in LFPAK using NextPower technology Rev. 01 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High

4.15. psmn1r0-30ylc.pdf Size:253K _philips2

PSMN1R4-40YLD
PSMN1R4-40YLD

PSMN1R0-30YLC N-channel 30 V 1.15 m? logic level MOSFET in LFPAK Rev. 03 17 January 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 p

4.16. psmn1r1-25ylc.pdf Size:384K _philips2

PSMN1R4-40YLD
PSMN1R4-40YLD

PSMN1R1-25YLC N-channel 25 V 1.15 m? logic level MOSFET in LFPAK using NextPower technology Rev. 1 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High

4.17. psmn1r2-25ylc.pdf Size:341K _philips2

PSMN1R4-40YLD
PSMN1R4-40YLD

PSMN1R2-25YLC N-channel 25 V 1.3 m? logic level MOSFET in LFPAK using NextPower technology Rev. 1 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High r

4.18. psmn1r6-30pl.pdf Size:225K _philips2

PSMN1R4-40YLD
PSMN1R4-40YLD

PSMN1R6-30PL N-channel 30 V 1.7 m? logic level MOSFET Rev. 02 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching S

4.19. psmn1r5-30yl.pdf Size:400K _philips2

PSMN1R4-40YLD
PSMN1R4-40YLD

PSMN1R5-30YL N-channel 30 V 1.5 m? logic level MOSFET in LFPAK Rev. 01 9 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits ? Advanced TrenchMOS provides

4.20. psmn1r5-40es.pdf Size:227K _philips2

PSMN1R4-40YLD
PSMN1R4-40YLD

PSMN1R5-40ES N-channel 40 V 1.6 m? standard level MOSFET in I2PAK. Rev. 01 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK (SOT226) package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficien

4.21. psmn1r2-30ylc.pdf Size:342K _philips2

PSMN1R4-40YLD
PSMN1R4-40YLD

PSMN1R2-30YLC N-channel 30 V 1.25m? logic level MOSFET in LFPAK using NextPower technology Rev. 1 3 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High r

4.22. psmn1r5-30ylc.pdf Size:346K _philips2

PSMN1R4-40YLD
PSMN1R4-40YLD

PSMN1R5-30YLC N-channel 30 V 1.55m? logic level MOSFET in LFPAK using NextPower technology Rev. 2 17 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High

4.23. psmn1r2-25yl.pdf Size:212K _philips2

PSMN1R4-40YLD
PSMN1R4-40YLD

PSMN1R2-25YL N-channel 25 V 1.2 m? logic level MOSFET in LFPAK Rev. 01 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides lo

4.24. psmn1r1-30pl.pdf Size:246K _philips2

PSMN1R4-40YLD
PSMN1R4-40YLD

PSMN1R1-30PL N-channel 30 V 1.3 m? logic level MOSFET in TO-220 Rev. 02 19 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low

4.25. psmn1r7-30yl.pdf Size:299K _philips2

PSMN1R4-40YLD
PSMN1R4-40YLD

PSMN1R7-30YL N-channel 30 V 1.7 m? logic level MOSFET in LFPAK Rev. 1 30 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits ? Advanced TrenchMOS provides lo

4.26. psmn1r5-25yl.pdf Size:199K _philips2

PSMN1R4-40YLD
PSMN1R4-40YLD

PSMN1R5-25YL N-channel TrenchMOS logic level FET Rev. 01 16 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits High efficiency

4.27. psmn1r1-30el.pdf Size:238K _philips2

PSMN1R4-40YLD
PSMN1R4-40YLD

PSMN1R1-30EL N-channel 30 V 1.3 m? logic level MOSFET in I2PAK Rev. 2 15 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low swi

4.28. psmn1r9-25ylc.pdf Size:353K _philips2

PSMN1R4-40YLD
PSMN1R4-40YLD

PSMN1R9-25YLC N-channel 25 V 2.05 m? logic level MOSFET in LFPAK using NextPower technology Rev. 1 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top