SVD50N06T Specs and Replacement
Type Designator: SVD50N06T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 86.67 nS
Cossⓘ - Output Capacitance: 393.2 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TO220
SVD50N06T substitution
- MOSFET ⓘ Cross-Reference Search
SVD50N06T datasheet
svd50n06t svd50n06d svd50n06m svd50n06mj.pdf
SVD50N06T/D/M/MJ 50A 60V N 2 SVD50N06T/D/M/MJ N MOS VDMOS 1 1 3 TO-252-2L 3 ... See More ⇒
Detailed specifications: HD2302, HD2305, HD2307, HD2310, HD2312, SVD3205F, SVD3205S, SVD501DEAG, 60N06, SVD50N06D, SVD50N06M, SVD50N06MJ, SVD540T, SVD540D, SVD540K, SVD640T, SVD640D
Keywords - SVD50N06T MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: 2SK2596
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